High Temperature Design Considerations for RF 

Speaker:  Michael Cunningham 

Host: MICS

Date: April 10 (Friday), 2015
Time: 3:00 PM - 4:00 PM
Location: Whittemore 654 (6th Floor Conference Room)

Abstract:

As research and industry push into new areas so must the technology that is used to study these areas. Extreme temperature electronics (>200°C) is one of these advances. Previously, low frequency opamps were the standard; however, as the demand for more data increases, it is now being matured into RF and microwave frequencies to allow for high data transfer and smaller footprints. This seminar involves discussion of the design considerations involved in designing high temperature RF circuits backed with measured data of OTS components.

Bio:

Michael Cunningham received his B.S. degree in Electrical Engineering from Virginia Tech in 2014.  Since then, he has been working with Dr. Ha, Jebreel Salem, Reza Hiemstra, and ZiHao Zhang to design a working high temperature RF communications system.  He plans to receive his M.S. in Electrical Engineering from Virginia Tech this Fall, 2015.  His research interests include RF and microwave circuits, RFICs, and Analog ICs.