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Hyunchul Kim

Kim
302 Whittemore (0111)
Blacksburg, VA
24061

Degree Objective: Ph.D.

Resume: Seeking for internship or cooperative education

Research Interests:

  • RF and Analog Signal Circuits
  • RF and High-Speed Integrated Circuits Design
  • High-Speed Serial and RF Transceivers for High-Speed Data Communication

Education:

  • Ph.D., Electrical and Computer Engineering, Virginia Tech, Blacksburg, USA, since Fall 2013 
  • M.S, Electrical Engineering, Korea University, Seoul, Korea, 2013
    • Thesis Title: "A Development of Silicon based D-band Amplifier"
  • B.S., Electrical Engineering, Korea University, Seoul, Korea, 2009

Publications:

  • Journal Papers
    • Hyunchul Kim, Jongwon Yun, Kiryong Song, and Jae-Sung Rieh, "SiGe 135-GHz amplifier with inductive positive feedback operating near fmax," Electronics Letters , vol.49, no.19, pp.1229,1230, Sept. 12 2013
    • Sungjin Kim, Hyun-Chul Kim, Dong-Hyun Kim, Sanggeun Jeon, Moonil Kim, and Jae-Sung Rieh, "A 58-72 GHz CMOS Wideband Variable Gain Low Noise Amplifier," Electronics Letters, vol. 47, no. 16, pp. 904-906, August, 2011
    • Sungjin Kim, Hyunchul Kim, Dong-Hyun Kim, Sanggeun Jeon, Yeocho Yoon, and Jae-Sung Rieh, "A V-Band Common-Source Low Noise Amplifier in a 0.13 um RFCMOS Technology and the Effect of Dummy Fills", IEICE Transactions on Electronics, Vol. E94-C, No. 5, pp. 807-813, May 2011
  • Conference Papers
    • Hyunchul Kim, Daekeun Yoon, and Jae-Sung Rieh, "A 140-GHz Fully Differential Common-Source Amplifier in 65 nm CMOS," 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 142-145, Okinawa, Japan, June 2012
    • Jongwon Yun, Hyunchul Kim, Hyogi Seo, and Jae-Sung Rieh, “A 140 GHz Single-Ended Injection Locked Frequency Divider with Inductive Feedback in SiGe HBT Technology”, IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 61-64, Santa Clara, CA, USA, Jan.17, 2012
    • Yongho Oh, Hyunchul Kim, and Jae-Sung Rieh, “Comparison of CE and CB configurations of SiGe HBTs for Power Gain and Stability,” The 20th Korean Conference on Semiconductor, Seoul, Korea, Feb. 15, 2012
    • Hyunchul Kim, Sungjin Kim, and Jae-Sung Rieh, “A 100 GHz Wide-band Amplifier in a 0.18µm SiGe Technology,” RF Integrated Circuit Technology Workshop, pp. 543-544, Jeju, Korea, Sept. 22, 2011

Personal Interests:

  • Baseball
  • Tennis
  • Basketball