Fariborz Lohrabi Pour

Research Interests:

• High temperature RF IC design
• Analog and mixed‐mode IC design
• (sub)mm-wave circuit design

Education:

• Ph.D., Electrical and Computer Engineering, Virginia Tech, 2021
• M.S., Electrical Engineering, Sharif University of Technology, Tehran, Iran, Jan. 2018
• B.S., Electrical Engineering, Isfahan University, Isfahan, Iran, Sept. 2013

Research Experiences:

• Design and implementation of C-band Ultra Low Phase Noise VCO with a novel dual tank structure
• Design and implementation of a VHF band resistive mixer using a GaN HEMT with a temperature conversion loss compensation mechanism.
  
• Design and implementation of a phased array transmitter on GaN HEMT on SiC for sub 6 GHz high temperature applications.
• 1-1.25 GHz, 2-2.5 GHz, and 4.2-5 GHz frequency bands Class-C VCOs with PVT compensation loops. (FoM>190, 188, 189 dBc/Hz @ Δω=10MHz, respectively)
• 8.5-10 GHz frequency band Class-C VCO with linear switch-capacitor networks to minimize the variation in the transfer function of the PLL due to variation in KVCO. (FoM>189dBc/Hz @ Δω=10MHz)
• Reference Generator Block (that provides 13 different frequencies around 1 GHz for the PLL offset loop with spur level of < -50dBc @ Δω=7.8125MHz and Phase Noise of <-145 @ Δω=30KHz)
• C-band dual loop PLL and custom design of all the PLL blocks including SSB Mixers, Conventional PFD/CP, CML dividers, and Operational Amplifier.
  Design and implementation of a multi-band RF energy harvester

Work Experience:

• RF circuit designer at ISDL Sharif University of Technology 2016-2018
• Graduate Teaching Assistant at Virginia Tech 2019-2021
• Post-Doc Researcher at Virginia Tech January 2022-Present
• Lecturer at Virginia Tech Spring 2022

Publications:

• F. Lohrabi Pour and D. Sam Ha, "Design and Performance Investigation of a Temperature Compensated Transmitter with GaN HEMTs for Phased-Array Applications," in IEEE Transactions on Microwave Theory and Techniques, Under Review.
• F. Lohrabi Pour and D. Sam Ha, "A M-PSK Modulated Polar Transmitter for IoT applications," 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021.
• F. Lohrabi Pour, A. Nikpaik, A. Medi and D. Sam Ha, "An Ultra-Low Phase Noise Dual Tank Oscillator," in IEEE Journal of Solid-State Circuits,  Under Review.
• F. Lohrabi Pour and D. S. Ha, "A Temperature Compensated Variable Gain Phase Shifter Based on GaN HEMTs," 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021.
• F. Lohrabi Pour and D. Sam Ha, "A Temperature Compensated 5 GHz GaN on SiC Power Amplifier," IEEE 63^rd International Midwest Symposium on Circuits and Systems (MWSCAS), Springfield, MA, USA, pp. 549-553, Aug. 2020.
• R. Kundupundi, F. Lohrabi Pour, D. Sam Ha, and K, Ramezanpour, " Digital predistortion of Class-AB and -F^-1 power amplifiers using BiLSTM deep neural network," 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021.
• J. M. Salem, F. Lohrabi Pour and D. Sam Ha, " High Temperature RF Transceiver Design for High-Speed Downhole Communications," in IEEE Transactions on Microwave Theory and Techniques, Submitted in Oct. 2021.
• R. Reed, F. Lohrabi Pour and D. Sam Ha, "Design of a Multi-Tone Wireless Power Transmitter Using Second Harmonic Extraction of a Voltage-Controlled Oscillator," 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 2021.
• C. Joseph, F. Lohrabi Pour, and D. S. Ha. "Input-resistance reduced gm-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication," Microelectronics Journal, vol. 114, pp. 105155, Aug. 2021.
• C. Joseph, F. Lohrabi Pour, and D. S. Ha. "A 0.13-μm CMOS resonator-based frequency-doubling mechanism for clock recovery in a full-rate 40 Gb/s optical receiver," Microelectronics Journal, vol. 114, pp. 105137, Aug. 2021.
• R. Reed, F. Lohrabi Pour and D. S. Ha, "An Energy Efficient RF Backscatter Modulator for IoT Applications," 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021.
• J. M. Salem, F. Lohrabi Pour and D. Sam Ha, "A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 2, pp. 581-591, Feb. 2021.
• N. Turner, F. Lohrabi Pour and D. S. Ha, "Design of a High Temperature 2.37 GHz Voltage-Controlled Oscillator with GaN-on-SiC HEMTs," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 67, no. 12, pp. 5153-5161, Dec. 2020.
• R. Reed, F. Lohrabi Pour and D. S. Ha, "An Efficient 2.4 GHz Differential Rectenna for Radio Frequency Energy Harvesting," IEEE 63^rd International Midwest Symposium on Circuits and Systems (MWSCAS), Springfield, MA, USA, pp. 208-212, Aug. 2020.
• B. Kerrigan, F. Lohrabi Pour, and D. S. Ha, " System Design of a High-Temperature Downhole Transceiver: Part I – Receiver," IEEE 62^nd International Midwest Symposium on Circuits and Systems (MWSCAS), August 2019.
• B. Kerrigan, F. Lohrabi Pour, and D. S. Ha, " System Design of a High-Temperature Downhole Transceiver: Part II – Transmitter," IEEE 62^nd International Midwest Symposium on Circuits and Systems (MWSCAS), August 2019.
• B.Salmani, F. Lohrabi Pour, M.B.B. Sharifian, "Comparison between the Vector Control Based on Anti-saturation Capability with the Sensorless Vector Control in PMSM ", American Journal of Electrical and Electronic Engineering, Volume 2, Issue 1, 2014; Pages 11-16.
• B.Salmani, M.B.B. Sharifian, F. Lohrabi Pour, "Reduce the current ripple of the PMSM with the vector control method based on anti-saturation than the sensorless vector control method ", Majlesi Journal of Energy Management, Volume 2, Issue 4, Dec. 2013.
• B.Salmani, M.B.B. Sharifian, F. Lohrabi Pour, "Indirect DC Advanced Vector Control Based on Anti-Saturation Block and Voltage Limitation ", 22^nd Iranian Conference on Electrical Engineering (ICEE), May 2014.

Personal Interests:

• Music
• Sport
• Novels